dcr4910w28 phase control thyristor ds5775 - 2 september 2014 ( ln 31929 ) 1 / 10 www.dynexsemi.com features ? double side cooling ? high surge capability applications ? high power drives ? high voltage power supplies ? static switches voltage ratings part and ordering number repetitive peak voltages v drm and v rrm v conditions dcr4910w28 dcr4910w26 DCR4910W24 2800 2600 2400 t vj = - 40c to 125c, i drm = i rrm = 200ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100v respectively lower voltage grades available. ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: dcr4910w28 note: please use the complete part number when ordering and quote this number in any future correspondence relating to your order. key parameters v drm 2800v i t(av) 4770a i tsm 65000a dv/dt* 2000v/s di/dt 500a/s * higher dv/dt selections available outline type code: w (see package details for further information) fig. 1 package outline
semiconductor dcr4910w28 2 / 10 www.dynexsemi.com current ratings t case = 60c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on - state current half wave resistive load 4770 a i t(rms) rms value - 7493 a i t continuous (direct) on - state current - 6680 a surge ratings symbol parameter test conditions max. units i tsm surge (non - repetitive) on - state current 10ms half sine, t case = 125c 65 ka i 2 t i 2 t for fusing v r = 0 21.13 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.00631 c/w single side cooled anode dc - 0.01115 c/w cathode dc - 0.01453 c/w r th(c - h) thermal resistance C case to heatsink clamping force 76kn double side - 0.0014 c/w (with mounting compound) single side - 0.0028 c/w t vj virtual junction temperature blocking v drm / vrrm - 125 c t stg storage temperature range - 55 125 c f m clamping force 68.0 84.0 kn
semiconductor dcr4910w28 3 / 10 www.dynexsemi.com dynamic characteristics symbol parameter test conditions min. max. units i rrm /i drm peak reverse and off - state current at v rrm /v drm , t case = 125c - 200 ma dv/dt max. linear rate of rise of off - state voltage to 67% v drm , t j = 125c, gate open - 2000 v/s di/dt rate of rise of on - state current from 67% v drm to 2x i t(av) repetitive 50hz - 250 a/s gate source 30v, 10 ? , non - repetitive - 500 a/s t r < 0.5s, t j = 125c v t(to) threshold voltage C low level 500a to 3000a at t case = 125c - 0.78 v threshold voltage C high level 3000a to 10000a at t case = 125c - 0.90 v r t on - state slope resistance C low level 500a to 3000a at t case = 125c - 0.1371 m ? on - state slope resistance C high level 3000a to 10000a at t case = 125c - 0.0957 m ? t gd delay time v d = 67% v drm , gate source 30v, 10 ? 0.5 1.5 s t r = 0.5s, t j = 25c t q turn - off time t j = 125c, v r = 200v, di/dt = 1a/s, 100 250 s dv dr /dt = 20v/s linear q s stored charge t j = 125c, di/dt C 1a/s, v r peak ~1700v v rm ~ 1100v 545 2030 c i l latching current t j = 25c, v d = 5v - 3 a i h holding current t j = 25c, r g - k = ? , i tm = 500a, i t = 5a - 300 ma
semiconductor dcr4910w28 4 / 10 www.dynexsemi.com gate trigger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger voltage v drm = 5v, t case = 25c 1.5 v v gd gate non - trigger voltage at v drm, t case = 125c tbd v i gt gate trigger current v drm = 5v, t case = 25c 250 ma i gd gate non - trigger current v drm = 5v, t case = 25c tbd ma curves fig.2 maximum & minimum on - state characteristics v tm equation where a = 1.344406 b = - 0.153272 v tm = a + bln (i t ) + c.i t +d. ? i t c = - 0.000026 d = 0.021061 these values are valid for t j = 125c for i t 500a to 10000a 0 1000 2000 3000 4000 5000 6000 7000 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 instantaneous on - state current i t - (a) instantaneous on - state voltage v t - (v) min 125 c max 125 c min 25 c max 25 c
semiconductor dcr4910w28 5 / 10 www.dynexsemi.com fig.3 on - state power dissipation C sine wave fig.4 maximum permissible case temperature, double side cooled C sine wave fig.5 maximum permissible heatsink temperature, double side cooled C sine wave fig.6 on - state power dissipation C rectangular wave 0 2 4 6 8 10 12 14 16 0 1000 2000 3000 4000 5000 6000 7000 8000 mean power dissipation - (kw) mean on - state current, i t(av) - (a) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 6000 7000 8000 maximum case temperature, t case ( o c ) mean on - state current, i t(av) - (a) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 6000 7000 maximum heatsink temperature, t heatsink - ( o c ) mean on - state current, i t(av) - (a) 180 120 90 60 30 0 2 4 6 8 10 12 14 16 0 1000 2000 3000 4000 5000 6000 7000 8000 mean power dissipation - (kw) mean on - state current, i t(av) - (a) d.c. 180 120 90 60 30
semiconductor dcr4910w28 6 / 10 www.dynexsemi.com fig.7 maximum permissible case temperature, double side cooled C rectangular wave fig.8 maximum permissible heatsink temperature, double side cooled C rectangular wave fig.9 maximum (limit) transient thermal impedance C junction to case (c/kw) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 6000 7000 8000 maximum permissible case temperature , t case - ( c) mean on - state current, i t(av) - (a) d.c. 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 6000 7000 8000 maximum heatsik temperature t heatsink - ( o c) mean on - state current, i t(av ) - (a) d.c. 180 120 90 60 30 0 2 4 6 8 10 12 14 16 0.001 0.01 0.1 1 10 100 thermal impedance, z th(j - c) - ( c/kw) time ( s ) double side cooling anode side cooling cathode sided cooling 1 2 3 4 double side cooled r i (c/kw) 0.8816 1.2993 2.8048 1.3305 t i (s) 0.0106818 0.058404 0.3584979 1.1285 anode side cooled r i (c/kw) 1.5197 3.2398 5.7622 0.6312 t i (s) 0.0170581 0.2424644 6.013 15.364 cathode side cooled r i (c/kw) 1.4106 2.4667 6.7451 3.9054 t i (s) 0.0158344 0.1786951 3.6201 6.196 z th = ? [r i x ( 1-exp. (t/t i ))] [1] ? r th(j-c) conduction tables show the increments of thermal resistance r th(j-c) when the device operates at conduction angles other than d.c. double side cooling anode side cooling cathode sided cooling ? z th (z) ? z th (z) ? z th (z) ? sine. rect. ? sine. rect. ? sine. rect. 180 1.00 0.67 180 0.94 0.64 180 0.95 0.65 120 1.16 0.97 120 1.08 0.91 120 1.09 0.92 90 1.33 1.13 90 1.23 1.06 90 1.25 1.07 60 1.48 1.31 60 1.37 1.22 60 1.38 1.23 30 1.61 1.51 30 1.47 1.38 30 1.49 1.40 15 1.66 1.61 15 1.52 1.47 15 1.54 1.49
semiconductor dcr4910w28 7 / 10 www.dynexsemi.com fig.10 multi - cycle surge current fig.11 single - cycle surge current fig.12 reverse recovery charge fig.13 reverse recovery current 0 2000 4000 6000 8000 10000 12000 0 5 10 15 20 25 stored charge, q s - (uc) rate of decay of on - state current, di/dt - (a/us) conditions: tj = 125 o c, v rpeak ~1700v v rm ~ 1100v snubber as appropriate to control reverse voltages q s max = 2027.7*(di/dt) 0.5535 q s min = 544.37*(di/dt) 0.7194 0 50 100 150 200 250 300 350 400 450 0 5 10 15 20 25 reverse recovery current, irr - (a) rate of decay of on - state current, di/dt - (a/us) conditions: tj = 125 o c, v rpeak ~1700v v rm ~ 1100v snubber as appropriate to control reverse voltages i rrmax = 35.174*(di/dt) 0.8262 i rrmin = 21.837*(di/dt) 0.8933
semiconductor dcr4910w28 8 / 10 www.dynexsemi.com fig14 gate characteristics fig. 15 gate characteristics 0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 gate trigger voltage, v gt - (v) gate trigger current i gt , - (a) tj = 125 o c tj = 25 o c tj = - 40 o c preferred gate drive area upper limit lower limit 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 gate trigger voltage, v gt - (v) gate trigger current, i gt - (a) lower limit upper limit 5w 10w 20w 50w 100w 150w - 40c 50 100 400 100 150 150 150 200 150 150 125 500 150 150 100 1000 150 100 25 10000 20 - - pulse width us frequency hz pulse power p gm (watts)
semiconductor dcr4910w28 9 / 10 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. lead length: 420mm lead terminal connector: m4 ring package outline type code: w fig.16 package outline cathode 20 offset (nom.) to gate tube 3rd angle projection if in doubt ask do not scale for package height see table ?120.0 max. ?84.6 nom. ?84.6 nom. anode gate ?1.5 deep (in both hole ?3.60 x 2.00 electrodes) device maximum thickness (mm) minimum thickness (mm) dcr1594sw28 27.34 26.79 dcr1595sw42 27.57 27.02 dcr1596sw52 27.69 27.14 dcr5450w22 27.265 26.715 dcr4910w28 27.34 26.79 dcr4100w42 27.57 27.02 dcr3640w52 27.69 27.14 dcr3020w65 27.95 27.4 dcr2510w85 28.31 27.76
semiconductor dcr4910w28 10 / 10 www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use tod ay. the assembly group offers high quality enginee ring support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assem bly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) i s available on request . for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. stresses above those listed in this data sheet may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety precautions should always be followed. http://www.dynexsemi.com e - mail: power_solutions@dynexsemi.com headquarters operations customer service dynex semiconductor ltd tel: +44(0)1522 502753 / 502901. fax: +44(0)1522 500020 doddington road, lincoln lincolnshire, ln6 3lf. united kingdom. tel: +44(0)1522 500500 fax: +44(0)1522 500550 ? dynex semiconductor 2003 technical documentation C not for resale. produced in united kingdom. this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, appli ed or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee exp ress or implied is made regarding the capability, performance or suitability of any product or service. the company reserves t he right to alter without prior notice the specification, design or price of any product or service. information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfac tory in a specific piece of equipment. it is the users responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. t hese products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the companys conditions of sale, which are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their resp ective owners.
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